期刊

Small

标题

Memory Devices: Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors

作者

Xiaoning Zhao, Zhongqiang Wang, Yu Xie, Haiyang Xu, Jiaxue Zhu, Xintong Zhang, Weizhen Liu, Guochun Yang, Jiangang Ma, Yichun Liu

摘要

In article number 1801325, Haiyang Xu, Yichun Liu, and co‐workers propose a strategy of TiO2‐assisted photocatalytic reduction to generate reduced graphene oxide (RGO)‐domains locally in Al/GO‐TiO2/ITO resistive switching (RS) memory. Such a mild reduction method can effectively eliminate the electrical FORMING process, improve the RS performance and help to maintain the flexibility of the memory devices.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201870136