期刊

Advanced Electronic Materials

标题

Semiconductors: Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector

作者

Xu Ji, Liang Chen, Mengxuan Xu, Mei Dong, Kun Yan, Shuang Cheng, Xueqian Kong, Tongyao Wang, Jiandang Liu,  Bingchuan Gu, Huanhua Wang, Zhiyong Liu, Shuao Wang, Feng Huang, Xiaoping Ouyang

摘要

Controllable and repeatable crystal‐imperfection‐modulation engineering (CIME) is important for the development of semiconductor science and technology. A universal and feasible CIME for ZnO based on creative electrochemical doping and strong oxidizing thermodynamic annealing processes is described by Feng Huang, Xiaoping Ouyang, and co‐workers in article number 1700307. Their method could be of major benefit for new wide‐band‐gap semiconductor devices.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201870010