期刊

ADVANCED THEORY AND SIMULATIONS

标题

Analytical Modeling of Organic–Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition

作者

Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu

摘要

Analytical models are crucial for building a theoretical basis for optimizing RRAM scheme and implementing its application in neuromorphic computing. In article number 1700035, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, and co‐workers present an analytical model demonstrating the evolution of resistive switching dynamics for CH3NH3PbI3 perovskite‐based RRAM. Furthermore, a 2‐layer neuromorphic network with 2‐transistor/1‐resistor synapses is demonstrated. This study paves the way for the use of perovskite‐based RRAM devices for neuromorphic systems.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/adts.201870009