期刊
Journal of the American Chemical Society
标题
Porous Field-Effect Transistors Based on a Semiconductive Metal–Organic Framework
作者
Guodong Wu, Jiahong Huang, Ying Zang, Jun He, Gang Xu
摘要
Recently, the emergence of conductive metal–organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air–liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm2 V–1 s–1, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.
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