Field-Effect Transistors: A Cofacially Stacked Electron-Deficient Small Molecule with a High Electron Mobility of over 10 cm2 V−1 s−1 in Air (Adv. Mater. 48/2015) (page 8120)-北京静远嘲风动漫传媒科技中心

Field-Effect Transistors: A Cofacially Stacked Electron-Deficient Small Molecule with a High Electron Mobility of over 10 cm2 V−1 s−1 in Air (Adv. Mater. 48/2015) (page 8120)

时间：2017-02-08 16:57:00

分类：Advanced Materials

作品信息

期刊
Advanced Materials

标题
Field-Effect Transistors: A Cofacially Stacked Electron-Deficient Small Molecule with a High Electron Mobility of over 10 cm2 V−1 s−1 in Air (Adv. Mater. 48/2015) (page 8120)

作者
Jin-Hu Dou, Yu-Qing Zheng, Ze-Fan Yao, Ting Lei, Xingxing Shen, Xu-Yi Luo, Zhi-Ao Yu, Shi-Ding Zhang, Guangchao Han, Zhi Wang, Yuanping Yi, Jie-Yu Wang and Jian Pei

摘要
A strong, electron-deficient small molecule, F4-BDOPV, has a lowest unoccupied molecular orbital (LUMO) level down to -4.44 eV and exhibits cofacial packing in single crystals. These features provide F4-BDOPV with good ambient stability and large charge-transfer integrals for electrons, leading to a high electron mobility of up to 12.6 cm2 V−1 s−1 in air.

原文链接
http://onlinelibrary.wiley.com/doi/10.1002/adma.201503803/full