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Photodetectors: Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire (Adv. Mater. 26/2015) (page 3971)
时间:2017-02-08 14:58:00
作品信息

期刊
Advanced Materials

标题
Photodetectors: Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ < 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire (Adv. Mater. 26/2015) (page 3971)

作者
Wei Zheng, Feng Huang, Ruisheng Zheng and Honglei Wu

摘要
A low-dimensional-structure vacuum-ultraviolet-sensitive photodetector based on high-quality aluminum nitride (AlN) micro-/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum-ultraviolet (VUV) photon detection and opens a way for developing diminutive, power-saving, and low-cost VUV materials and sensors that can be potentially applied in geospace sciences and solar-terrestrial physics.

原文链接
http://onlinelibrary.wiley.com/doi/10.1002/adma.201500268/full

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