期刊
Advanced  Materials

标题
Switching Memory: An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions (Adv. Mater. 17/2015) (page 2812)

作者

Hongwei Tan, Gang Liu, Xiaojian Zhu, Huali Yang, Bin Chen, Xinxin Chen, Jie Shang, Wei D. Lu, Yihong Wu and Run-Wei Li

摘要
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2−x/AlOy/Al structure, is demonstrated. Arising from the photo­induced detrapping, electrode-injection and retrapping of electrons in the CeO2−x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.

原文链接
http://onlinelibrary.wiley.com/doi/10.1002/adma.201500039/full