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Transistors: High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V−1 s−1 (Adv. Mater. 4/2017)
时间:2017-01-21 20:21:00
作品信息

期刊

Advanced Materials

标题

Transistors: High-Performance, Air-Stable Field-Effect Transistors Based on Heteroatom-Substituted Naphthalenediimide-Benzothiadiazole Copolymers Exhibiting Ultrahigh Electron Mobility up to 8.5 cm V−1 s−1 (Adv. Mater. 4/2017)

作者

Zhiyuan Zhao, Zhihong Yin, Huajie Chen, Liping Zheng, Chunguang Zhu, Long Zhang, Songting Tan, Hanlin Wang, Yunlong Guo, Qingxin Tang and Yunqi Liu

摘要

High-mobility electron-transporting polymeric semiconductors are very critical for plastic optoelectronics. H. J. Chen, Y. Q. Liu, and co-workers demonstrate in article 1602410 that rational heteroatom engineering is applied to develop novel naphthalenediimide-benzothiadiazole copolymers for high-performance air-stable polymeric field-effect transistors, exhibiting an ultrahigh electron mobility of 8.5 cm2 V−1 s−1 and excellent shelf storage under ambient conditions. The cover picture conceptually reveals its potential application in organic functional circuits.

原文链接

http://onlinelibrary.wiley.com/doi/10.1002/adma.v29.4/issuetoc

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