期刊

CrystEngComm

标题

Epitaxial growth of AlN films on sapphire via a multilayer structure adopting a low- and high-temperature alternation technique

作者

X. Zhang, F. J. Xu, J. M. Wang, C. G. He, L. S. Zhang, J. Huang, J. P. Cheng, Z. X. Qin, X. L. Yang, N. Tang, X. Q. Wang and B. Shen

摘要

Epitaxial growth of AlN films on c-sapphire using a multilayer structure has been investigated by metal–organic chemical vapor deposition adopting multiple alternation cycles of low- and high-temperature (LT–HT) growth.

原文链接

http://pubs.rsc.org/en/journals/journalissues/ce#!issueid=ce017039&type=current