Advanced Electronic Material标题
Memristors: A Spin–Orbit‐Torque Memristive Device
Shuai Zhang, Shijiang Luo, Nuo Xu, Qiming Zou, Min Song, Jijun Yun, Qiang Luo, Zhe Guo, Ruofan Li, Weicheng Tian, Xin Li, Hengan Zhou, Huiming Chen, Yue Zhang, Xiaofei Yang, Wanjun Jiang, Ka Shen, Jeongmin Hong, Zhe Yuan, Li Xi, Ke Xia, Sayeef Salahuddin, Bernard Dieny, Long You
A domain wall can be driven back and forth in a continuous manner in a ferromagnetic (FM) layer by applying in‐plane positive or negative current pulses along the heavy‐metal (HM) layer, as reported by Long You and co‐workers in article number 1800782. Utilizing the spin‐orbit torque that the current exerts on the CoFeB magnetization results in memristive (synapse‐like) functions.