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Memristors: A Spin–Orbit‐Torque Memristive Device
时间:2019-08-21 14:34:15
作品信息

期刊

Advanced Electronic Material

标题

Memristors: A Spin–Orbit‐Torque Memristive Device

作者

Shuai Zhang, Shijiang Luo, Nuo Xu, Qiming Zou, Min Song, Jijun Yun, Qiang Luo, Zhe Guo, Ruofan Li, Weicheng Tian, Xin Li, Hengan Zhou, Huiming Chen,  Yue Zhang, Xiaofei Yang, Wanjun Jiang, Ka Shen,  Jeongmin Hong, Zhe Yuan, Li Xi, Ke Xia, Sayeef Salahuddin, Bernard Dieny, Long You

摘要

A domain wall can be driven back and forth in a continuous manner in a ferromagnetic (FM) layer by applying in‐plane positive or negative current pulses along the heavy‐metal (HM) layer, as reported by Long You and co‐workers in article number 1800782. Utilizing the spin‐orbit torque that the current exerts on the CoFeB magnetization results in memristive (synapse‐like) functions.

原文链接

https://onlinelibrary.wiley.com/doi/10.1002/aelm.201970022

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