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Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS2 via Nitrogen Plasma Treatment
时间:2019-09-09 16:29:44
分类:Small
作品信息

期刊

Small

标题

Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS2 via Nitrogen Plasma Treatment 

作者

Jianfeng Jiang, Qinghua Zhang, Aizhu Wang, Yu Zhang, Fanqi Meng, Congcong Zhang, Xianjin Feng, Yuanping Feng, Lin Gu, Hong Liu, Lin Han

摘要

In article number 1901791, Lin Han, Hong Liu, Lin Gu, and co‐workers present a facile and effective defects‐patching approach via nitrogen plasma doping for inevitable vacancies in transition metal dichalcogenides, which opens up new opportunities for the use of high‐performance 2D devices in practical electronic applications. In the cover, the five‐color stone in the hands of Nuwa refers to the nitrogen atom.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201970195

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