Advanced Functional Materials
Quantum Dot LEDs: Over 30% External Quantum Efficiency Light‐Emitting Diodes by Engineering Quantum Dot‐Assisted Energy Level Match for Hole Transport Layer
Jiaojiao Song, Ouyang Wang, Huaibin Shen, Qingli Lin, Zhaohan Li, Lei Wang, Xintong Zhang, Lin Song Li
In article number 1808377, Huaibin Shen, Lin Song Li, and co‐workers fabricate light‐emitting diodes with an external quantum efficiency >30% by exploiting Zn1−xCdxSe core/shell quantum dots with ZnSe as the intermediate layer and ultrathin ZnS. The maximum brightness achieved is up to 334 000 cd m−2, and the operational lifetime is extended to ≈1 800 000 h at 100 cd m−2.