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Deepening the Valance Band Edges of NiOx Contacts by Alkaline Earth Metal Doping for Efficient Perovskite Photovoltaics with High Open‐Circuit Voltage
时间:2019-12-31 17:07:20
分类:Solar RRL
作品信息

期刊

Solar RRL

标题

Deepening the Valance Band Edges of NiOx Contacts by Alkaline Earth Metal Doping for Efficient Perovskite Photovoltaics with High Open‐Circuit Voltage

作者

Bing Ge, Hong Wei Qiao, Ze Qing Lin, Zi Ren Zhou, Ai Ping Chen, Shuang Yang, Yu Hou, Hua Gui Yang

摘要

In article no. 1900192, Ai Ping Chen, Shuang Yang, Yu Hou, and co‐workers employ a versatile alkaline earth metals doping strategy to engineer the electronic structure of NiOx contacts for inverted planar perovskite solar cells, in which the champion device demonstrates a power conversion efficiency of 19.49% with a high open circuit voltage of 1.14 V. Alkaline earth metals doping can significantly optimize the electrical properties by deepening the valence band maximum and enhancing the hole conductivity.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/solr.201970066

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