期刊
Advanced Materials
标题
Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO3 from Near‐ and Far‐Field Correlative Studies
作者
Gonzalo Álvarez‐Pérez, Thomas G. Folland, Ion Errea, Javier Taboada‐Gutiérrez, Jiahua Duan, Javier Martín‐Sánchez, Ana I. F. Tresguerres‐Mata, Joseph R. Matson, Andrei Bylinkin, Mingze He, Weiliang Ma, Qiaoliang Bao, José Ignacio Martín, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso‐González
摘要
In article number 1908176, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso‐González, and co‐workers extract the IR permittivity of the biaxial crystal α‐MoO3 by correlative far‐ and near‐field measurements, using FTIR reflectance spectroscopy and s‐SNOM polariton interferometry, thus providing both an accurate permittivity model and a novel approach to extracting dielectric functions of nanomaterials. Moreover, through density functional theory, insights into the vibrational states dictating such permittivity are revealed.
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