期刊

Small methods

标题

Low Lattice Mismatch InSe–Se Vertical Van der Waals Heterostructure for High‐performance Transistors via Strong Fermi‐Level Depinning

作者

Jianfeng Jiang, Fanqi Meng, Qilin Cheng, Aizhu Wang, Yuke Chen, Jie Qiao, Jinbo Pang, Weidong Xu, Hao Ji, Yu Zhang, Qinghua Zhang, Shanpeng Wang, Xianjin Feng, Lin Gu, Hong Liu, Lin Han

摘要

In article number 2000238, Hong Liu, Lin Han, and co‐workers present InSe‐Se vertical van der Waals (vdW) heterostructures to address a formidable contact engineering challenge, which have a low lattice mismatch of 1.1% and form 2D/2D low‐resistance vdW contacts, creating an InSe contact interface that substantially limits chemical disorder and Fermi‐level pinning.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/smtd.202070032