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Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire
时间:2021-06-07 17:02:19
作品信息

期刊

Advanced Electronic Materials

标题

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire

作者

Yu-Chuan Shih, Ling Lee, Kai-De Liang, Arumugam Manikandan, Wen-Wu Liu, Yu-Ze Chen, Mu-Tung Chang, Zhiming M. Wang, Yu-Lun Chueh

摘要

A resistive switching memory fabricated by using an in situ current-induced oxidization process on a single crystal metallic nanowire is demonstrated by Yu-Lun Chueh and co-workers in article number 2000252. A single-crystal Cu nanowire (NW) is found to be the best material with stable switching behaviors including reversible switching up to 100 cycles with large ON/OFF ratio of >103 and low switching voltages of <0.5.

原文链接

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202170015

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