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Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors
时间:2021-10-08 16:22:36
分类:Small
作品信息

期刊

Small

标题

Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors 

作者

Jiamin Sun,Xinming Zhuang,Yibo Fan,Shuai Guo,Zichao Cheng,Dong Liu,Yanxue Yin,Yufeng Tian,Zhiyong Pang,Zhipeng Wei,Xiufeng Song,Lei Liao,Feng Chen,Johnny C. Ho,Zai-xing Yang

摘要

Field-Effect-Transistors

Metal-semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting to the regulation of carrier mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai-xing Yang, and co-workers demonstrate that by simply constructing the metal-semiconductor junctions, the peak hole mobility of GaSb nanowire field-effect-transistor can be enhanced to the highest value of 3372 cm2 V−1 s−1 in the atmosphere, showing three times than the un-deposited one.

原文链接

https://onlinelibrary.wiley.com/doi/10.1002/smll.202170190

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