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2D Materials: Chemical Growth of 1T-TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity
时间:2021-12-28 11:20:47
作品信息

期刊

Advanced Materials

标题

2D Materials: Chemical Growth of 1T-TaS2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity 

作者

Xinsheng Wang,Haining Liu,Juanxia Wu,Junhao Lin,Wen He,Hui Wang,Xinghua Shi,Kazutomo Suenaga,Liming Xie

摘要

Chemical synthesis of two-dimensional charge-density-wave (CDW) materials on insulating substrates is important. In article number 1800074, Liming Xie and co-workers develop a chemical vapor deposition (CVD) strategy to synthesize 1T-TaS2 monolayers and few-layers on hexagonal boron nitride (h-BN). Robust CDW transitions are observed down to the monolayer extreme and highly responsive room-temperature bolometers are fabricated and demonstrated.

原文链接

https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201870289

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