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Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates
时间:2022-05-07 11:04:56
作品信息

期刊

Advanced Functional Materials

标题

Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates

作者

Danshuo Liu,Lin Hu,Xuelin Yang,Zhihong Zhang,Haodong Yu,Fawei Zheng,Yuxia Feng,Jiaqi Wei,Zidong Cai,Zhenghao Chen,Cheng Ma,Fujun Xu,Xinqiang Wang,Weikun Ge,Kaihui Liu,Bing Huang,Bo Shen

摘要

Arbitrary Substrates

In article number 2113211, Xuelin Yang, Bing Huang, Bo Shen, and co-workers propose a strategy of polarization-driven-orientation selective growth and demonstrate that single-crystalline GaN can in principle be achieved on polycrystalline diamond or other substrates by utilizing a composed buffer layer consisting of graphene and polycrystalline physical-vapor-deposited AlN. This strategy can be extended to the growth of any emergent single-crystalline semiconductor films on any arbitrary freestanding substrates by choosing appropriate 2D materials with matched crystal structures.

原文链接

https://onlinelibrary.wiley.com/doi/10.1002/adfm.202270085

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