期刊
Advanced Materials
标题
Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration
作者
Fang Liu, Tao Wang, Zhihong Zhang, Tong Shen, Xin Rong, Bowen Sheng, Liuyun Yang, Duo Li, Jiaqi Wei, Shanshan Sheng, Xingguang Li, Zhaoying Chen, Renchun Tao, Ye Yuan, Xuelin Yang, Fujun Xu, Jingmin Zhang, Kaihui Liu, Xin-Zheng Li, Bo Shen, Xinqiang Wang
摘要
Interfacial Atomic Configurations
In article number 2106814, Kaihui Liu, Xin-Zheng Li, Xinqiang Wang, and co-workers profile a novel perspective of the lattice arrangement (polarity) manipulation of a quasi-van der Waals epitaxial hexagonal III-nitride film on graphene by interfacial atomic configuration engineering. Through using atomic O preirradiation and a specific supply sequence of Ga and N atoms to form the C–O–N–Ga(3) and C–O–Ga–N(3) configurations, N- and Ga-lattice polarity GaN films are achieved on transferred graphene, respectively.
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