期刊
Advanced Functional Materials
标题
Field‐Effect Transistors: Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic
作者
Mianzeng Zhong, Qinglin Xia, Longfei Pan, Yuqing Liu, Yabin Chen, Hui‐Xiong Deng, Jingbo Li, Zhongming Wei
摘要
In article 1802581, Zhongming Wei and co‐workers describe the layered crystal structure for a new 2D elemental semiconductor consisting of black arsenic (b‐As). The image also shows the Chinese character of the “As” element. The reported b‐As is more stable under ambient conditions than black phosphorous and could be obtained from natural mineral.
原文链接
https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201870312