期刊

Advanced Materials

标题

Transistors: Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening

作者

Zhihao Yu, Zhun-Yong Ong, Yiming Pan, Yang Cui, Run Xin, Yi Shi, Baigeng Wang, Yun Wu, Tangsheng Chen, Yong-Wei Zhang, Gang Zhang, Xinran Wang

摘要

On page 547, charged impurities in monolayer MoS2 are effectively screened by combining a high-κ dielectric substrate and a high density of carriers, leading to an unprecedented room-temperature electron mobility of ≈150 cm2 V−1 s−1. Y. Shi, G. Zhang, X. Wang and co-workers also demonstrate phonon-limited transport in monolayer MoS2 for the first time, an important milestone for electronic device applications.

原文链接

http://onlinelibrary.wiley.com/doi/10.1002/adma.201670019/full