期刊
Small
标题
Field‐Effect Transistors: A Facile and Effective Method for Patching Sulfur Vacancies of WS2 via Nitrogen Plasma Treatment
作者
Jianfeng Jiang, Qinghua Zhang, Aizhu Wang, Yu Zhang, Fanqi Meng, Congcong Zhang, Xianjin Feng, Yuanping Feng, Lin Gu, Hong Liu, Lin Han
摘要
In article number 1901791, Lin Han, Hong Liu, Lin Gu, and co‐workers present a facile and effective defects‐patching approach via nitrogen plasma doping for inevitable vacancies in transition metal dichalcogenides, which opens up new opportunities for the use of high‐performance 2D devices in practical electronic applications. In the cover, the five‐color stone in the hands of Nuwa refers to the nitrogen atom.
原文链接
https://onlinelibrary.wiley.com/doi/abs/10.1002/smll.201970195