期刊
Small
标题
Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors
作者
Jiamin Sun,Xinming Zhuang,Yibo Fan,Shuai Guo,Zichao Cheng,Dong Liu,Yanxue Yin,Yufeng Tian,Zhiyong Pang,Zhipeng Wei,Xiufeng Song,Lei Liao,Feng Chen,Johnny C. Ho,Zai-xing Yang
摘要
Field-Effect-Transistors
Metal-semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting to the regulation of carrier mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai-xing Yang, and co-workers demonstrate that by simply constructing the metal-semiconductor junctions, the peak hole mobility of GaSb nanowire field-effect-transistor can be enhanced to the highest value of 3372 cm2 V−1 s−1 in the atmosphere, showing three times than the un-deposited one.
原文链接
https://onlinelibrary.wiley.com/doi/10.1002/smll.202170190