期刊
Advanced Functional Materials
标题
Polarization-Driven-Orientation Selective Growth of Single-Crystalline III-Nitride Semiconductors on Arbitrary Substrates
作者
Danshuo Liu,Lin Hu,Xuelin Yang,Zhihong Zhang,Haodong Yu,Fawei Zheng,Yuxia Feng,Jiaqi Wei,Zidong Cai,Zhenghao Chen,Cheng Ma,Fujun Xu,Xinqiang Wang,Weikun Ge,Kaihui Liu,Bing Huang,Bo Shen
摘要
Arbitrary Substrates
In article number 2113211, Xuelin Yang, Bing Huang, Bo Shen, and co-workers propose a strategy of polarization-driven-orientation selective growth and demonstrate that single-crystalline GaN can in principle be achieved on polycrystalline diamond or other substrates by utilizing a composed buffer layer consisting of graphene and polycrystalline physical-vapor-deposited AlN. This strategy can be extended to the growth of any emergent single-crystalline semiconductor films on any arbitrary freestanding substrates by choosing appropriate 2D materials with matched crystal structures.
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