期刊

Advanced Electronic Materials

标题

A 10 nm Short Channel MoS2 Transistor without the Resolution Requirement of Photolithography

作者

Fan Wu,Jie Ren,Yi Yang,Zhaoyi Yan,He Tian,Guangyang Gou,Xuefeng Wang,Zijian Zhang,Xin Yang,Xing Wu,Tian-Ling Ren

摘要

Short-Cannel MoS2 Transistors

Yi Yang, He Tian, Xing Wu, Tian-Ling Ren, and colleagues demonstrate a photolithography resolution-independent method to realize 10 nm short-channel MoS2 transistors in article 2100543. By depositing the noble electrode partially on the self-oxidized aluminum electrode, the channel length is directly defined by the ≈10 nm thickness of oxidization layer, which can provide new opportunities for scaling down 2D materials-based transistors.

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202170057