当前位置: 首页 > 学术作品
Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In2Se3
时间:2023-04-20 16:50:42
分类:Nano Letters
作品信息

期刊

Nano Letters

标题

Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In2Se3

作者

Qinming He, Zhiyuan Tang, Minzhi Dai, Huili Shan, Hui Yang, Yi Zhang, and Xin Luo

摘要

Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In2Se3 films by selenization of In2O3 in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In2Se3 with excellent crystalline quality. Electronic transport measurements of In2Se3 highlight the current–voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In2Se3 opens up potential applications of In2Se3 in novel nanoelectronics.

原文链接

https://pubs.acs.org/doi/10.1021/acs.nanolett.2c04289

在线咨询
ONLINE CONSULTING
电话咨询
PHONE CONSULTING

010-82449939